sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate transistors transistor (pnp) features ? npn complement to bc868 ? low voltage ? high current maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -32 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-25v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1) v ce =-10v, i c =-5ma 50 h fe(2) v ce =-1v, i c =-0.5a 100 375 dc current gain h fe(3) v ce =-1v, i c =-1a 60 collector-emitter saturation voltage v ce(sat) i c =-1a,i b =-0.1a -0.5 v v ce =-1v, i c =-1a -1 v base -emitter voltage v be v ce =-10v, i c =-5ma -0.62 v transition frequency f t v ce =-5v,i c =-10ma, f=100mhz 40 mhz classification of h fe(2) rank BC869 BC869-16 BC869-25 range 100 C 375 100 C 250 160 C 375 marking cec cgc chc symbol parameter value unit v cbo collector-base voltage -32 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 bc86 ? 2012-10 willas electronic corp. preliminary
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012-10 willas electronic corp. sot-89 plastic-encapsulate transistors bc86 preliminary
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